IPW60R125CPFKSA1
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- Mfr.Part #
- IPW60R125CPFKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 25A TO247-3
- Stock
- 42
- In Stock ：
- 42
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- CoolMOS™
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 208W Tc
- Power Dissipation :
- 208W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-247-3
- Avalanche Energy Rating (Eas) :
- 708 mJ
- Turn-Off Delay Time :
- 50 ns
- Packaging :
- Tube
- Max Dual Supply Voltage :
- 600V
- Pulsed Drain Current-Max (IDM) :
- 82A
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 16A, 10V
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Mount :
- Through Hole
- Rise Time :
- 5ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2011
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 100V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 25A
- Continuous Drain Current (ID) :
- 25A
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 3.5V @ 1.1mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Turn On Delay Time :
- 15 ns
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IPW60R125CPFKSA1
N-Channel Tube 125m Ω @ 16A, 10V ±20V 2500pF @ 100V 70nC @ 10V TO-247-3
IPW60R125CPFKSA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 708 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2500pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 25A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 50 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 82A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 600V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPW60R125CPFKSA1 Features
the avalanche energy rating (Eas) is 708 mJ
a continuous drain current (ID) of 25A
the turn-off delay time is 50 ns
based on its rated peak drain current 82A.
IPW60R125CPFKSA1 Applications
There are a lot of Infineon Technologies
IPW60R125CPFKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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