IPW60R125C6FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-247-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

125m Ω @ 14.5A, 10V

Avalanche Energy Rating (Eas) :

636 mJ

JESD-30 Code :

R-PSFM-T3

Series :

CoolMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Drain-source On Resistance-Max :

0.125Ohm

ECCN Code :

EAR99

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

3.5V @ 960μA

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Published :

2011

Power Dissipation-Max :

219W Tc

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

89A

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

30A

Input Capacitance (Ciss) (Max) @ Vds :

2127pF @ 100V

DS Breakdown Voltage-Min :

600V

Surface Mount :

No

Number of Terminations :

3