IPW60R099CPFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

255W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

800 mJ

Drain to Source Voltage (Vdss) :

650V

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 100V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.099Ohm

Vgs (Max) :

±20V

Published :

2008

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Package / Case :

TO-247-3

Transistor Application :

SWITCHING

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

93A

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Vgs(th) (Max) @ Id :

3.5V @ 1.2mA

JESD-609 Code :

e3

ECCN Code :

EAR99

Packaging :

Tube

DS Breakdown Voltage-Min :

600V

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Drain Current-Max (Abs) (ID) :

31A

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

99m Ω @ 18A, 10V

Factory Lead Time :

40 Weeks

Pbfree Code :

yes

Series :

CoolMOS™

Terminal Finish :

Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V