IPW60R099CPA
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- Mfr.Part #
- IPW60R099CPA
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IPW60R099 - 600V-800V N-CHANNEL
- Stock
- 44,439
- In Stock ：
- 44,439
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 18A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 100V
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 3.5V @ 1.2mA
- Series :
- Automotive, AEC-Q101, CoolMOS™
- Continuous Drain Current (ID) :
- 31A
- Operating Temperature :
- -40°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 60 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Turn On Delay Time :
- 10 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 18 Weeks
- Drain-source On Resistance-Max :
- 0.105Ohm
- Mount :
- Through Hole
- Package / Case :
- TO-247-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 255W Tc
- Published :
- 2010
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Rise Time :
- 5ns
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Max Dual Supply Voltage :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 31A Tc
- Datasheets
- IPW60R099CPA
N-Channel Tube 105m Ω @ 18A, 10V ±20V 2800pF @ 100V 80nC @ 10V TO-247-3
IPW60R099CPAFKSA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 800 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2800pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 31A amps.It is [60 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 600V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPW60R099CPAFKSA1 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 31A
the turn-off delay time is 60 ns
IPW60R099CPAFKSA1 Applications
There are a lot of Infineon Technologies
IPW60R099CPAFKSA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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