IPW60R080P7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

118 mJ

Factory Lead Time :

18 Weeks

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2014

Vgs (Max) :

±20V

Surface Mount :

No

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

110A

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Transistor Element Material :

SILICON

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

37A Tc

DS Breakdown Voltage-Min :

600V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

CoolMOS™ P7

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

129W Tc

Drain-source On Resistance-Max :

0.08Ohm

Number of Terminations :

3

Package / Case :

TO-247-3

Number of Elements :

1

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Drain to Source Voltage (Vdss) :

600V

Input Capacitance (Ciss) (Max) @ Vds :

2180pF @ 400V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

80m Ω @ 11.8A, 10V

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 590μA

Mounting Type :

Through Hole