IPW60R075CPFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 100V

Max Dual Supply Voltage :

600V

Number of Terminations :

3

FET Type :

N-Channel

Number of Pins :

3

Power Dissipation :

313W

Drain to Source Voltage (Vdss) :

650V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

3.5V @ 1.7mA

Published :

2008

Continuous Drain Current (ID) :

39A

Package / Case :

TO-247-3

Packaging :

Tube

Power Dissipation-Max :

313W Tc

Current - Continuous Drain (Id) @ 25°C :

39A Tc

Turn On Delay Time :

40 ns

Terminal Finish :

Tin (Sn)

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

116nC @ 10V

Mount :

Through Hole

Factory Lead Time :

52 Weeks

Pin Count :

3

Rds On (Max) @ Id, Vgs :

75m Ω @ 26A, 10V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

CoolMOS™

Fall Time (Typ) :

7 ns

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

110 ns

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.075Ohm

Rise Time :

17ns