IPW60R070CFD7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

129A

Published :

2014

Terminal Position :

Single

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

650V

Packaging :

Tube

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Rds On (Max) @ Id, Vgs :

70m Ω @ 15.1A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2721pF @ 400V

ECCN Code :

EAR99

Factory Lead Time :

18 Weeks

DS Breakdown Voltage-Min :

600V

Package / Case :

TO-247-3

Series :

CoolMOS™ CFD7

Drain Current-Max (Abs) (ID) :

31A

Vgs(th) (Max) @ Id :

4.5V @ 760μA

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

31A Tc

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

151 mJ

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.07Ohm

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

156W Tc