IPW60R070C6FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

1135 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

600V

Drain-source On Resistance-Max :

0.07Ohm

Rds On (Max) @ Id, Vgs :

70m Ω @ 25.8A, 10V

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

600V

JEDEC-95 Code :

TO-247AA

Vgs(th) (Max) @ Id :

3.5V @ 1.72mA

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2008

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

159A

JESD-609 Code :

e3

Power Dissipation-Max :

391W Tc

Number of Terminations :

3

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3800pF @ 100V

Series :

CoolMOS™

Package / Case :

TO-247-3

Drain Current-Max (Abs) (ID) :

53A

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Number of Elements :

1

Factory Lead Time :

2 Weeks

Surface Mount :

No

ECCN Code :

EAR99