IPU09N03LA G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

25V

Terminal Position :

Single

Published :

2008

Vgs (Max) :

±20V

Power Dissipation-Max :

63W Tc

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Additional Feature :

LOGIC LEVEL COMPATIBLE

DS Breakdown Voltage-Min :

25V

JESD-30 Code :

R-PSIP-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

350A

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Pin Count :

3

Surface Mount :

No

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

75 mJ

Series :

OptiMOS™

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

8.8m Ω @ 30A, 10V

Drain Current-Max (Abs) (ID) :

50A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Vgs(th) (Max) @ Id :

2V @ 20μA

Input Capacitance (Ciss) (Max) @ Vds :

1642pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Number of Terminations :

3

Number of Elements :

1

Drain-source On Resistance-Max :

0.015Ohm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ