IPU04N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2008

JESD-609 Code :

e0

Continuous Drain Current (ID) :

50A

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

5199pF @ 15V

Lead Free :

Contains Lead

Packaging :

Tube

Mounting Type :

Through Hole

Current Rating :

50A

Series :

OptiMOS™

Voltage - Rated DC :

25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

4m Ω @ 50A, 10V

Power Dissipation-Max :

115W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Transistor Application :

SWITCHING

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0059Ohm

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 80μA

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

600 mJ

Qualification Status :

Not Qualified

Pin Count :

3

Terminal Finish :

Tin/Lead (Sn/Pb)

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Terminal Position :

Single