IPU04N03LA G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Drain to Source Voltage (Vdss) :

25V

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Published :

2008

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0059Ohm

Rds On (Max) @ Id, Vgs :

4m Ω @ 50A, 10V

Power Dissipation-Max :

115W Tc

JESD-30 Code :

R-PSIP-T3

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

5199pF @ 15V

Vgs(th) (Max) @ Id :

2V @ 80μA

Drain Current-Max (Abs) (ID) :

50A

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

600 mJ

Additional Feature :

LOGIC LEVEL COMPATIBLE

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Number of Elements :

1

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Packaging :

Tube

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

350A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

MATTE TIN

Reach Compliance Code :

Compliant

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

3

Surface Mount :

No

DS Breakdown Voltage-Min :

25V

Terminal Position :

Single

Mounting Type :

Through Hole

ECCN Code :

EAR99