IPU04N03LB G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Series :

OptiMOS™

Drain Current-Max (Abs) (ID) :

50A

Vgs (Max) :

±20V

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

DS Breakdown Voltage-Min :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

200A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

115W Tc

Drain to Source Voltage (Vdss) :

30V

Published :

2008

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Reach Compliance Code :

Compliant

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

3

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

430 mJ

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 15V

Vgs(th) (Max) @ Id :

2V @ 70μA

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 5V

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

50A Tc

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PSIP-T3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain-source On Resistance-Max :

0.006Ohm

Surface Mount :

No

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 50A, 10V