IPU07N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Mount :

Through Hole

Vgs(th) (Max) @ Id :

2V @ 40µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Rated DC :

25V

Packaging :

Tube

Series :

OptiMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Terminal Position :

Single

JESD-609 Code :

e0

Published :

2003

ECCN Code :

EAR99

Vgs (Max) :

±20V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2653pF @ 15V

Pin Count :

3

Rise Time :

18ns

Continuous Drain Current (ID) :

30A

Pulsed Drain Current-Max (IDM) :

210A

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 30A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSIP-T3

Power Dissipation-Max :

83W Tc

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0101Ohm

Current Rating :

30A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

375 mJ

Terminal Finish :

Tin/Lead (Sn/Pb)

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

30A Tc