IPU05N03LA G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

50A

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 30A, 10V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

300 mJ

Surface Mount :

No

Transistor Element Material :

SILICON

Additional Feature :

LOGIC LEVEL COMPATIBLE

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Drain-source On Resistance-Max :

0.0086Ohm

Input Capacitance (Ciss) (Max) @ Vds :

3110pF @ 15V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

DS Breakdown Voltage-Min :

25V

Power Dissipation-Max :

94W Tc

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2V @ 50μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

JESD-30 Code :

R-PSIP-T3

Number of Terminations :

3

Published :

2008

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Finish :

MATTE TIN

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

350A

Packaging :

Tube

Series :

OptiMOS™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

25V

Pin Count :

3