IPU090N03L G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Power Dissipation-Max :

42W Tc

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Packaging :

Tube

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Drain-source On Resistance-Max :

0.0135Ohm

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

280A

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSIP-T3

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

DS Breakdown Voltage-Min :

30V

Drain Current-Max (Abs) (ID) :

40A

HTS Code :

8541.29.00.95

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

9m Ω @ 30A, 10V

JESD-609 Code :

e3

Surface Mount :

No

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

30V

Published :

2008

Mounting Type :

Through Hole

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

70 mJ

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON