IPU060N03L G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Pin Count :

3

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.29.00.95

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 15V

Pulsed Drain Current-Max (IDM) :

350A

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.009Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

RoHS Status :

RoHS Compliant

Packaging :

Tube

Series :

OptiMOS™

Avalanche Energy Rating (Eas) :

60 mJ

Surface Mount :

No

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

3

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation-Max :

56W Tc

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

50A

DS Breakdown Voltage-Min :

30V

Rds On (Max) @ Id, Vgs :

6m Ω @ 30A, 10V

Published :

2008

Drain to Source Voltage (Vdss) :

30V

Terminal Finish :

MATTE TIN

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSIP-T3

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V