IPI12CNE8N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Rds On (Max) @ Id, Vgs :

12.6m Ω @ 67A, 10V

Transistor Element Material :

SILICON

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Surface Mount :

No

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

268A

RoHS Status :

RoHS Compliant

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PSIP-T3

Input Capacitance (Ciss) (Max) @ Vds :

4340pF @ 40V

Number of Elements :

1

Series :

OptiMOS™

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Drain Current-Max (Abs) (ID) :

67A

Drain to Source Voltage (Vdss) :

85V

ECCN Code :

EAR99

Mounting Type :

Through Hole

Power Dissipation-Max :

125W Tc

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Reach Compliance Code :

Compliant

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

154 mJ

DS Breakdown Voltage-Min :

85V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Published :

2008

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 83μA

Pbfree Code :

yes

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.0126Ohm