IPI126N10N3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain to Source Voltage (Vdss) :

100V

Drain-source On Resistance-Max :

0.0126Ohm

Reach Compliance Code :

Compliant

Packaging :

Tube

Surface Mount :

No

FET Type :

N-Channel

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Pulsed Drain Current-Max (IDM) :

232A

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Current - Continuous Drain (Id) @ 25°C :

58A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 50V

Rds On (Max) @ Id, Vgs :

12.6m Ω @ 46A, 10V

Series :

OptiMOS™

DS Breakdown Voltage-Min :

100V

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Number of Elements :

1

Power Dissipation-Max :

94W Tc

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

70 mJ

Mounting Type :

Through Hole

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

58A

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSIP-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3.5V @ 46µA

Published :

2011