IPI120N08S404AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

310 mJ

Lead Free :

Contains Lead

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

Automotive, AEC-Q101, OptiMOS™

Vgs (Max) :

±20V

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

6450pF @ 25V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Max Dual Supply Voltage :

80V

Vgs(th) (Max) @ Id :

4V @ 120µA

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

120A

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSIP-T3

Drain-source On Resistance-Max :

0.0044Ohm

Power Dissipation-Max :

179W Tc

Transistor Element Material :

SILICON

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Halogen Free :

Halogen Free

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 100A, 10V

Published :

2013

Reach Compliance Code :

not_compliant

Mounting Type :

Through Hole

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

480A

FET Type :

N-Channel

Factory Lead Time :

14 Weeks