IPI120N08S403AKSA1

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Mfr.Part #
IPI120N08S403AKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 80V 120A TO262-3
Stock
13,103
In Stock :
13,103

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
120A
Halogen Free :
Halogen Free
Avalanche Energy Rating (Eas) :
920 mJ
Number of Elements :
1
Operating Temperature :
-55°C~175°C TJ
Power Dissipation-Max :
278W Tc
Transistor Element Material :
SILICON
Max Dual Supply Voltage :
80V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Tin (Sn)
Published :
2013
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Rds On (Max) @ Id, Vgs :
2.8m Ω @ 100A, 10V
JESD-609 Code :
e3
Turn On Delay Time :
30 ns
Reach Compliance Code :
not_compliant
Terminal Position :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
3
Vgs(th) (Max) @ Id :
4V @ 223μA
Fall Time (Typ) :
50 ns
Lead Free :
Contains Lead
Case Connection :
DRAIN
Series :
Automotive, AEC-Q101, OptiMOS™
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
HTS Code :
8541.29.00.95
Additional Feature :
Green
Turn-Off Delay Time :
60 ns
ECCN Code :
EAR99
Mounting Type :
Through Hole
Number of Pins :
3
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.0028Ohm
Gate to Source Voltage (Vgs) :
20V
Peak Reflow Temperature (Cel) :
260
Gate Charge (Qg) (Max) @ Vgs :
167nC @ 10V
Rise Time :
15ns
Pulsed Drain Current-Max (IDM) :
480A
Factory Lead Time :
14 Weeks
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
11550pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Packaging :
Tube
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPI120N08S403AKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, IPI120N08S403AKSA1 pinout, IPI120N08S403AKSA1 datasheet PDF, IPI120N08S403AKSA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPI120N08S403AKSA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPI120N08S403AKSA1


N-Channel Tube 2.8m Ω @ 100A, 10V ±20V 11550pF @ 25V 167nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA

IPI120N08S403AKSA1 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 920 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 11550pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 60 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 480A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 30 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 80V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.

IPI120N08S403AKSA1 Features


the avalanche energy rating (Eas) is 920 mJ
a continuous drain current (ID) of 120A
the turn-off delay time is 60 ns
based on its rated peak drain current 480A.


IPI120N08S403AKSA1 Applications


There are a lot of Infineon Technologies
IPI120N08S403AKSA1 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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