IPI120N06S4H1AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 200μA

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Published :

2009

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

250W Tc

RoHS Status :

RoHS Compliant

Case Connection :

DRAIN

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

21900pF @ 25V

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 100A, 10V

Pulsed Drain Current-Max (IDM) :

480A

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Max Dual Supply Voltage :

60V

Number of Terminations :

3

Number of Elements :

1

Continuous Drain Current (ID) :

120A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0024Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSIP-T3

FET Type :

N-Channel

Number of Channels :

1

Series :

Automotive, AEC-Q101, OptiMOS™

Mounting Type :

Through Hole

Terminal Position :

Single