IPI120N06S403AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

167W Tc

Published :

2009

Continuous Drain Current (ID) :

120A

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 100A, 10V

Pulsed Drain Current-Max (IDM) :

480A

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Series :

Automotive, AEC-Q101, OptiMOS™

Vgs(th) (Max) @ Id :

4V @ 120µA

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0032Ohm

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Terminal Position :

Single

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

13150pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Number of Terminations :

3

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

392 mJ

JESD-30 Code :

R-PSIP-T3

Max Dual Supply Voltage :

60V