IPI120N06S403AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

13150pF @ 25V

Published :

2009

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

80 ns

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Pulsed Drain Current-Max (IDM) :

480A

Vgs(th) (Max) @ Id :

4V @ 120µA

Series :

OptiMOS™

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

167W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

10ns

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Vgs (Max) :

±20V

Turn On Delay Time :

40 ns

Continuous Drain Current (ID) :

120A

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 100A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Max Dual Supply Voltage :

60V

ECCN Code :

EAR99

Mounting Type :

Through Hole

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

15 ns

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Case Connection :

DRAIN