IPI120N06S402AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

10 ns

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Series :

OptiMOS™

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

188W Tc

Vgs(th) (Max) @ Id :

4V @ 140μA

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Number of Channels :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

5ns

Turn On Delay Time :

25 ns

Avalanche Energy Rating (Eas) :

560 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

50 ns

Pulsed Drain Current-Max (IDM) :

480A

JESD-609 Code :

e3

Number of Elements :

1

FET Type :

N-Channel

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0028Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Mount :

Through Hole

Packaging :

Tube

Continuous Drain Current (ID) :

120A

Input Capacitance (Ciss) (Max) @ Vds :

15750pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 100A, 10V

Max Dual Supply Voltage :

60V

Weight :

2.387001g

Published :

2009

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Reach Compliance Code :

not_compliant

Factory Lead Time :

16 Weeks

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes