IPI120N06S402AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

15750pF @ 25V

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Reach Compliance Code :

Compliant

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

120A

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSIP-T3

Power Dissipation-Max :

188W Tc

Drain-source On Resistance-Max :

0.0028Ohm

Packaging :

Tube

Transistor Element Material :

SILICON

Series :

OptiMOS™

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 100A, 10V

Pulsed Drain Current-Max (IDM) :

480A

Avalanche Energy Rating (Eas) :

560 mJ

Drain to Source Voltage (Vdss) :

60V

Number of Elements :

1

Surface Mount :

No

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 140μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2009