IPI120N04S402AKSA1
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- Mfr.Part #
- IPI120N04S402AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 120A TO262-3
- Stock
- 5,211
- In Stock ：
- 5,211
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Max Dual Supply Voltage :
- 40V
- Rise Time :
- 16ns
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2010
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.0021Ohm
- Vgs(th) (Max) @ Id :
- 4V @ 110μA
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 16 Weeks
- Mount :
- Through Hole
- Power Dissipation-Max :
- 158W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) :
- 120A
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 30 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 10740pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 480 mJ
- Rds On (Max) @ Id, Vgs :
- 2.1m Ω @ 100A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- OptiMOS™
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 480A
- Halogen Free :
- Halogen Free
- Lead Free :
- Contains Lead
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 134nC @ 10V
- FET Type :
- N-Channel
- Turn On Delay Time :
- 27 ns
- Datasheets
- IPI120N04S402AKSA1
N-Channel Tube 2.1m Ω @ 100A, 10V ±20V 10740pF @ 25V 134nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI120N04S402AKSA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 480 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 10740pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 480A.A turn-on delay time of 27 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 40V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPI120N04S402AKSA1 Features
the avalanche energy rating (Eas) is 480 mJ
a continuous drain current (ID) of 120A
the turn-off delay time is 30 ns
based on its rated peak drain current 480A.
IPI120N04S402AKSA1 Applications
There are a lot of Infineon Technologies
IPI120N04S402AKSA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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