IPI120N04S401AKSA1
- Mfr.Part #
- IPI120N04S401AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 120A TO262-3
- Stock
- 435
- In Stock :
- 435
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.0019Ohm
- Turn On Delay Time :
- 34 ns
- Turn-Off Delay Time :
- 41 ns
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 16ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 14000pF @ 25V
- Halogen Free :
- Halogen Free
- Pulsed Drain Current-Max (IDM) :
- 480A
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 1.9m Ω @ 100A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 176nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Max Dual Supply Voltage :
- 40V
- Vgs(th) (Max) @ Id :
- 4V @ 140μA
- Power Dissipation-Max :
- 188W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2010
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Packaging :
- Tube
- Number of Pins :
- 3
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 16 Weeks
- Vgs (Max) :
- ±20V
- Series :
- OptiMOS™
- Lead Free :
- Contains Lead
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 120A
- Terminal Position :
- Single
- Fall Time (Typ) :
- 36 ns
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Datasheets
- IPI120N04S401AKSA1

N-Channel Tube 1.9m Ω @ 100A, 10V ±20V 14000pF @ 25V 176nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI120N04S401AKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 750 mJ.A device's maximum input capacitance is 14000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 120A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 41 ns.Its maximum pulsed drain current is 480A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 34 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 40V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
IPI120N04S401AKSA1 Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 120A
the turn-off delay time is 41 ns
based on its rated peak drain current 480A.
IPI120N04S401AKSA1 Applications
There are a lot of Infineon Technologies
IPI120N04S401AKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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