IPI11N03LA
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- Mfr.Part #
- IPI11N03LA
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 30A TO262-3
- Stock
- 29,357
- In Stock ：
- 29,357
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2V @ 20μA
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- OptiMOS™
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Drain to Source Breakdown Voltage :
- 25V
- JESD-30 Code :
- R-PSIP-T3
- Vgs (Max) :
- ±20V
- Pin Count :
- 3
- Published :
- 2008
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 11.5m Ω @ 30A, 10V
- Packaging :
- Tube
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Drain-source On Resistance-Max :
- 0.0115Ohm
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 5V
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Number of Elements :
- 1
- Power Dissipation :
- 52W
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 43ns
- Voltage - Rated DC :
- 25V
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Current Rating :
- 30A
- Pulsed Drain Current-Max (IDM) :
- 210A
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 30A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1358pF @ 15V
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 20 ns
- Fall Time (Typ) :
- 2.8 ns
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 52W Tc
- Transistor Application :
- SWITCHING
- Datasheets
- IPI11N03LA
N-Channel Tube 11.5m Ω @ 30A, 10V ±20V 1358pF @ 15V 11nC @ 5V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI11N03LA Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 80 mJ.A device's maximum input capacitance is 1358pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=25V, and this device has a drain-to-source breakdown voltage of 25V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.Its maximum pulsed drain current is 210A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IPI11N03LA Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 210A.
IPI11N03LA Applications
There are a lot of Infineon Technologies
IPI11N03LA applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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