IPI09N03LA
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- Mfr.Part #
- IPI09N03LA
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 50A TO262-3
- Stock
- 18,822
- In Stock ：
- 18,822
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 65A
- Fall Time (Typ) :
- 4.2 ns
- Operating Temperature :
- -55°C~175°C TJ
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 75 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Current Rating :
- 50A
- FET Type :
- N-Channel
- Terminal Finish :
- MATTE TIN
- Number of Terminations :
- 3
- Power Dissipation :
- 63W
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 9.2m Ω @ 30A, 10V
- Pin Count :
- 3
- Element Configuration :
- Single
- Mount :
- Through Hole
- JESD-30 Code :
- R-PSIP-T3
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation-Max :
- 63W Tc
- Number of Elements :
- 1
- Rise Time :
- 88.5ns
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.0155Ohm
- Drain to Source Breakdown Voltage :
- 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 5V
- Vgs(th) (Max) @ Id :
- 2V @ 20μA
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 50A
- Series :
- OptiMOS™
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 25V
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Turn-Off Delay Time :
- 22 ns
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Published :
- 2008
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1642pF @ 15V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IPI09N03LA
N-Channel Tube 9.2m Ω @ 30A, 10V ±20V 1642pF @ 15V 13nC @ 5V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI09N03LA Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 75 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1642pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.With a drain-source breakdown voltage of 25V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 25V.65A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 22 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
IPI09N03LA Features
the avalanche energy rating (Eas) is 75 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 22 ns
IPI09N03LA Applications
There are a lot of Infineon Technologies
IPI09N03LA applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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