IPI09N03LA
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- Mfr.Part #
- IPI09N03LA
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 50A TO262-3
- Stock
- 18,822
- In Stock ：
- 18,822
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 25V
- Fall Time (Typ) :
- 4.2 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Voltage - Rated DC :
- 25V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1642pF @ 15V
- Packaging :
- Tube
- Terminal Finish :
- MATTE TIN
- Power Dissipation :
- 63W
- Rds On (Max) @ Id, Vgs :
- 9.2m Ω @ 30A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Series :
- OptiMOS™
- RoHS Status :
- RoHS Compliant
- Drain-source On Resistance-Max :
- 0.0155Ohm
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 5V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- JESD-30 Code :
- R-PSIP-T3
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 75 mJ
- Current Rating :
- 50A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 2V @ 20μA
- Rise Time :
- 88.5ns
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 50A
- Published :
- 2008
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Drain Current-Max (Abs) (ID) :
- 65A
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 22 ns
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 63W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Datasheets
- IPI09N03LA
N-Channel Tube 9.2m Ω @ 30A, 10V ±20V 1642pF @ 15V 13nC @ 5V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI09N03LA Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 75 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1642pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.With a drain-source breakdown voltage of 25V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 25V.65A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 22 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
IPI09N03LA Features
the avalanche energy rating (Eas) is 75 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 22 ns
IPI09N03LA Applications
There are a lot of Infineon Technologies
IPI09N03LA applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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