IPI034NE7N3 G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

640 mJ

Drain-source On Resistance-Max :

0.0034Ohm

Gate Charge (Qg) (Max) @ Vgs :

117nC @ 10V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

400A

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 100A, 10V

Packaging :

Tube

Reach Compliance Code :

Compliant

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

214W Tc

Drain to Source Voltage (Vdss) :

75V

Qualification Status :

Not Qualified

Series :

OptiMOS™

Drain Current-Max (Abs) (ID) :

100A

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

75V

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

JESD-30 Code :

R-PSIP-T3

Vgs(th) (Max) @ Id :

3.8V @ 155μA

Surface Mount :

No

Number of Terminations :

3

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

8130pF @ 37.5V

Published :

2011

Pbfree Code :

yes

Terminal Position :

Single

Mounting Type :

Through Hole

Number of Elements :

1

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant