IPI032N06N3 G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 100A, 10V

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Reach Compliance Code :

Compliant

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

RoHS Compliant

DS Breakdown Voltage-Min :

60V

Series :

OptiMOS™

Packaging :

Tube

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

60V

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

188W Tc

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.0032Ohm

Pbfree Code :

yes

Published :

2008

Pulsed Drain Current-Max (IDM) :

480A

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

235 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Vgs (Max) :

±20V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

120A

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PSIP-T3

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 118µA

Surface Mount :

No

Number of Terminations :

3

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 30V

Number of Elements :

1