IPI024N06N3GXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10mm

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Element Configuration :

Single

Height :

9.25mm

Max Dual Supply Voltage :

60V

Halogen Free :

Halogen Free

Mounting Type :

Surface Mount

Power Dissipation :

250W

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 30V

Drain-source On Resistance-Max :

0.0024Ohm

Series :

OptiMOS™

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Pin Count :

3

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

480A

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Gate Charge (Qg) (Max) @ Vgs :

275nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

79 ns

Published :

2008

Fall Time (Typ) :

24 ns

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

120A

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 100A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Rise Time :

80ns

Turn On Delay Time :

41 ns

Factory Lead Time :

18 Weeks

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 196µA

Power Dissipation-Max :

250W Tc

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount, Through Hole

Drain to Source Breakdown Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Width :

4.4mm