IPI020N06NAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Halogen Free :

Halogen Free

Power Dissipation :

214W

Continuous Drain Current (ID) :

120A

RoHS Status :

ROHS3 Compliant

Rise Time :

45ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

2m Ω @ 100A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.002Ohm

Vgs(th) (Max) @ Id :

2.8V @ 143μA

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

480A

ECCN Code :

EAR99

Pin Count :

3

FET Type :

N-Channel

Pbfree Code :

No

Number of Terminations :

3

Number of Pins :

3

Turn-Off Delay Time :

51 ns

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Contains Lead

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

420 mJ

Series :

OptiMOS™

Published :

2008

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

29A

Packaging :

Bulk

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

7800pF @ 30V

Gate Charge (Qg) (Max) @ Vgs :

106nC @ 10V

Fall Time (Typ) :

19 ns

Current - Continuous Drain (Id) @ 25°C :

29A Ta 120A Tc

Power Dissipation-Max :

3W Ta 214W Tc

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

60V

Turn On Delay Time :

24 ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Elements :

1

HTS Code :

8541.29.00.95

Mount :

Through Hole

Max Dual Supply Voltage :

60V