IPI029N06NAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

8 ns

Max Dual Supply Voltage :

60V

Terminal Position :

Single

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

4100pF @ 30V

Halogen Free :

Halogen Free

Series :

OptiMOS™

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 100A, 10V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

30 ns

Pulsed Drain Current-Max (IDM) :

400A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Lead Free :

Contains Lead

Pin Count :

3

Continuous Drain Current (ID) :

100A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

15ns

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0029Ohm

Current - Continuous Drain (Id) @ 25°C :

24A Ta 100A Tc

Terminal Finish :

Tin (Sn)

Power Dissipation :

136W

Factory Lead Time :

18 Weeks

Mount :

Through Hole

Drain to Source Breakdown Voltage :

60V

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

No

Number of Elements :

1

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

2.8V @ 75μA

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

JESD-30 Code :

R-PSIP-T3

Operating Mode :

ENHANCEMENT MODE

Published :

2008

Drain Current-Max (Abs) (ID) :

24A

ECCN Code :

EAR99

Power Dissipation-Max :

3W Ta 136W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Packaging :

Tube

JESD-609 Code :

e3