IPI023NE7N3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 100A, 10V

Avalanche Energy Rating (Eas) :

1100 mJ

Reach Compliance Code :

Compliant

Pbfree Code :

yes

Number of Elements :

1

Packaging :

Tube

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Surface Mount :

No

Drain to Source Voltage (Vdss) :

75V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

3.8V @ 273μA

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

120A Tc

JESD-30 Code :

R-PSIP-T3

FET Type :

N-Channel

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Terminal Position :

Single

Mounting Type :

Through Hole

Published :

2012

Pulsed Drain Current-Max (IDM) :

480A

DS Breakdown Voltage-Min :

75V

Drain-source On Resistance-Max :

0.0023Ohm

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Power Dissipation-Max :

300W Tc

Gate Charge (Qg) (Max) @ Vgs :

206nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

14400pF @ 37.5V

Drain Current-Max (Abs) (ID) :

120A