IPI032N06N3GAKSA1
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- Mfr.Part #
- IPI032N06N3GAKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 120A TO262-3
- Stock
- 45,428
- In Stock ：
- 45,428
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Number of Elements :
- 1
- Max Dual Supply Voltage :
- 60V
- Drain to Source Breakdown Voltage :
- 60V
- Power Dissipation :
- 188W
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 3.2m Ω @ 100A, 10V
- Published :
- 2008
- Pbfree Code :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Radiation Hardening :
- No
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Pulsed Drain Current-Max (IDM) :
- 480A
- Turn On Delay Time :
- 35 ns
- Vgs(th) (Max) @ Id :
- 4V @ 118µA
- Lead Free :
- Contains Lead
- Turn-Off Delay Time :
- 62 ns
- Power Dissipation-Max :
- 188W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 11.177mm
- Continuous Drain Current (ID) :
- 120A
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 20 ns
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4.572mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 13000pF @ 30V
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Factory Lead Time :
- 18 Weeks
- Number of Pins :
- 3
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 165nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 120ns
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Halogen Free :
- Halogen Free
- Transistor Element Material :
- SILICON
- Length :
- 10.36mm
- Series :
- OptiMOS™
- Datasheets
- IPI032N06N3GAKSA1
N-Channel Tube 3.2m Ω @ 100A, 10V ±20V 13000pF @ 30V 165nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI032N06N3GAKSA1 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 13000pF @ 30V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [62 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 480A.A turn-on delay time of 35 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 60V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPI032N06N3GAKSA1 Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 480A.
IPI032N06N3GAKSA1 Applications
There are a lot of Infineon Technologies
IPI032N06N3GAKSA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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