IPI032N06N3GAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 30V

Published :

2008

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Vgs (Max) :

±20V

Pbfree Code :

No

Turn-Off Delay Time :

62 ns

Series :

OptiMOS™

Fall Time (Typ) :

20 ns

ECCN Code :

EAR99

Packaging :

Tube

Drain to Source Breakdown Voltage :

60V

JESD-609 Code :

e3

Mounting Type :

Through Hole

Power Dissipation-Max :

188W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

480A

Length :

10.36mm

Power Dissipation :

188W

Height :

11.177mm

Width :

4.572mm

Terminal Finish :

Tin (Sn)

Lead Free :

Contains Lead

Rise Time :

120ns

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Number of Elements :

1

Halogen Free :

Halogen Free

Continuous Drain Current (ID) :

120A

Transistor Element Material :

SILICON

Factory Lead Time :

18 Weeks

Vgs(th) (Max) @ Id :

4V @ 118µA

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 100A, 10V

Turn On Delay Time :

35 ns

Pin Count :

3

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Max Dual Supply Voltage :

60V

Radiation Hardening :

No

Element Configuration :

Single