IPI08CNE8N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

85V

Avalanche Energy Rating (Eas) :

262 mJ

Current - Continuous Drain (Id) @ 25°C :

95A Tc

Gate Charge (Qg) (Max) @ Vgs :

99nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

85V

Input Capacitance (Ciss) (Max) @ Vds :

6690pF @ 40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

RoHS Status :

RoHS Compliant

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Series :

OptiMOS™

Published :

2008

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

6.4m Ω @ 95A, 10V

Transistor Element Material :

SILICON

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

ECCN Code :

EAR99

Mounting Type :

Through Hole

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

167W Tc

Vgs(th) (Max) @ Id :

4V @ 130µA

Reach Compliance Code :

Compliant

Pin Count :

3

JESD-30 Code :

R-PSIP-T3

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

95A

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

380A

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single