IPI08CN10N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2008

Drain-source On Resistance-Max :

0.0085Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 95A, 10V

Transistor Application :

SWITCHING

Number of Terminations :

3

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

262 mJ

RoHS Status :

RoHS Compliant

JESD-609 Code :

e3

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

100V

Reach Compliance Code :

Compliant

Pulsed Drain Current-Max (IDM) :

380A

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 130µA

Drain Current-Max (Abs) (ID) :

95A

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

100V

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1

Vgs (Max) :

±20V

Series :

OptiMOS™

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

95A Tc

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

6660pF @ 50V

Power Dissipation-Max :

167W Tc

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Qualification Status :

Not Qualified

Packaging :

Tube