IPI084N06L3GXKSA1
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- Mfr.Part #
- IPI084N06L3GXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 50A TO262-3
- Stock
- 500
- In Stock ：
- 500
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Published :
- 2008
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Max Dual Supply Voltage :
- 60V
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 60V
- Vgs(th) (Max) @ Id :
- 2.2V @ 34μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 4900pF @ 30V
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Series :
- OptiMOS™
- Drain-source On Resistance-Max :
- 0.0084Ohm
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 4.5V
- Turn On Delay Time :
- 15 ns
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- JESD-609 Code :
- e3
- Factory Lead Time :
- 12 Weeks
- Turn-Off Delay Time :
- 37 ns
- Height :
- 9.45mm
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Halogen Free :
- Halogen Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 50A
- Power Dissipation-Max :
- 79W Tc
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 8.4m Ω @ 50A, 10V
- Packaging :
- Tube
- Pin Count :
- 3
- Pulsed Drain Current-Max (IDM) :
- 200A
- Width :
- 4.52mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Length :
- 10.36mm
- Datasheets
- IPI084N06L3GXKSA1
N-Channel Tube 8.4m Ω @ 50A, 10V ±20V 4900pF @ 30V 29nC @ 4.5V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI084N06L3GXKSA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4900pF @ 30V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 50A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 37 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 200A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 60V, it supports the maximal dual supply voltage.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
IPI084N06L3GXKSA1 Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 200A.
IPI084N06L3GXKSA1 Applications
There are a lot of Infineon Technologies
IPI084N06L3GXKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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