IPI076N12N3GAKSA1
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- Mfr.Part #
- IPI076N12N3GAKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 120V 100A TO262-3
- Stock
- 69
- In Stock ：
- 69
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 39 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 18 Weeks
- Mount :
- Through Hole
- Published :
- 2008
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- OptiMOS™
- Rds On (Max) @ Id, Vgs :
- 7.6m Ω @ 100A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Pulsed Drain Current-Max (IDM) :
- 400A
- Lead Free :
- Contains Lead
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 10 ns
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 230 mJ
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 6640pF @ 60V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn On Delay Time :
- 24 ns
- Rise Time :
- 50ns
- Vgs(th) (Max) @ Id :
- 4V @ 130µA
- ECCN Code :
- EAR99
- Power Dissipation :
- 188W
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 100A
- Gate Charge (Qg) (Max) @ Vgs :
- 101nC @ 10V
- Power Dissipation-Max :
- 188W Tc
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Max Dual Supply Voltage :
- 120V
- Terminal Position :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Halogen Free :
- Halogen Free
- JESD-30 Code :
- R-PSIP-T3
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.0076Ohm
- Datasheets
- IPI076N12N3GAKSA1
N-Channel Tube 7.6m Ω @ 100A, 10V ±20V 6640pF @ 60V 101nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI076N12N3GAKSA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 230 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6640pF @ 60V.This device has a continuous drain current (ID) of [100A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 39 ns.A maximum pulsed drain current of 400A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 24 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 120V.Its overall power consumption can be reduced by using drive voltage (10V).
IPI076N12N3GAKSA1 Features
the avalanche energy rating (Eas) is 230 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 39 ns
based on its rated peak drain current 400A.
IPI076N12N3GAKSA1 Applications
There are a lot of Infineon Technologies
IPI076N12N3GAKSA1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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