IPI072N10N3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Vgs(th) (Max) @ Id :

3.5V @ 90µA

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

320A

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

100V

Terminal Position :

Single

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

4910pF @ 50V

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSIP-T3

RoHS Status :

RoHS Compliant

DS Breakdown Voltage-Min :

100V

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

80A

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Avalanche Energy Rating (Eas) :

160 mJ

Drain-source On Resistance-Max :

0.0072Ohm

Reach Compliance Code :

Compliant

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Vgs (Max) :

±20V

Power Dissipation-Max :

150W Tc

Series :

OptiMOS™ 3

Number of Terminations :

3

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 80A, 10V

Mounting Type :

Through Hole