IPI070N08N3 G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

3840pF @ 40V

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Packaging :

Tube

ECCN Code :

EAR99

Series :

OptiMOS™

FET Type :

N-Channel

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

80A

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Terminal Position :

Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.5V @ 73µA

Power Dissipation-Max :

136W Tc

Pin Count :

3

Rds On (Max) @ Id, Vgs :

7m Ω @ 73A, 10V

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

80V

Terminal Finish :

MATTE TIN

Number of Terminations :

3

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

320A

RoHS Status :

RoHS Compliant

DS Breakdown Voltage-Min :

80V

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

Compliant

Surface Mount :

No

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Avalanche Energy Rating (Eas) :

150 mJ

Published :

2008

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0067Ohm