IPI06N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

50A

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

225 mJ

JESD-30 Code :

R-PSIP-T3

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

ECCN Code :

EAR99

Series :

OptiMOS™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation-Max :

83W Tc

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Drain Current-Max (Abs) (ID) :

91A

Published :

2003

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.0099Ohm

Voltage - Rated DC :

25V

Current Rating :

50A

Pin Count :

3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Terminal Position :

Single

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 30A, 10V

Number of Terminations :

3

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2653pF @ 15V

FET Type :

N-Channel

Mount :

Through Hole

Packaging :

Tube

Vgs(th) (Max) @ Id :

2V @ 40µA

Number of Elements :

1