IPI06CN10N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

214W Tc

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0065ohm

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Number of Elements :

1

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

480 mJ

Number of Terminations :

3

Terminal Position :

Single

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSIP-T3

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

40

DS Breakdown Voltage-Min :

100V

Pulsed Drain Current-Max (IDM) :

400A

Pin Count :

3

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Surface Mount :

No

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 100A, 10V

Drain Current-Max (Abs) (ID) :

100A

ECCN Code :

EAR99

Series :

OptiMOS™

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

139nC @ 10V

Terminal Finish :

MATTE TIN

FET Type :

N-Channel

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

100V

JESD-609 Code :

e3

Published :

2008

Vgs(th) (Max) @ Id :

4V @ 180μA