IPI05N03LA
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- Mfr.Part #
- IPI05N03LA
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 80A TO262-3
- Stock
- 14,303
- In Stock ：
- 14,303
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Published :
- 2003
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 5V
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Pulsed Drain Current-Max (IDM) :
- 385A
- Voltage - Rated DC :
- 25V
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- RoHS Status :
- RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- JESD-30 Code :
- R-PSIP-T3
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current Rating :
- 80A
- Drain-source On Resistance-Max :
- 0.0081Ohm
- Vgs(th) (Max) @ Id :
- 2V @ 50μA
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- OptiMOS™
- Continuous Drain Current (ID) :
- 80A
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 190 mJ
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Rds On (Max) @ Id, Vgs :
- 4.9m Ω @ 55A, 10V
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3110pF @ 15V
- Power Dissipation-Max :
- 94W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- IPI05N03LA
N-Channel Tube 4.9m Ω @ 55A, 10V ±20V 3110pF @ 15V 25nC @ 5V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI05N03LA Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 190 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3110pF @ 15V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 385A.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IPI05N03LA Features
the avalanche energy rating (Eas) is 190 mJ
a continuous drain current (ID) of 80A
based on its rated peak drain current 385A.
IPI05N03LA Applications
There are a lot of Infineon Technologies
IPI05N03LA applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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