IPI052NE7N3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.8V @ 91μA

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Vgs (Max) :

±20V

Pin Count :

3

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

370 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

75V

JESD-30 Code :

R-PSIP-T3

ECCN Code :

EAR99

Pbfree Code :

yes

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

4750pF @ 37.5V

Terminal Position :

Single

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

80A Tc

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.0052Ohm

Mounting Type :

Through Hole

Reach Compliance Code :

Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

75V

Drain Current-Max (Abs) (ID) :

80A

Surface Mount :

No

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Power Dissipation-Max :

150W Tc

Number of Elements :

1

Series :

OptiMOS™

Pulsed Drain Current-Max (IDM) :

320A

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Published :

2011

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 80A, 10V