IPI04N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Voltage - Rated DC :

25V

Power Dissipation-Max :

107W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.0067Ohm

Input Capacitance (Ciss) (Max) @ Vds :

3877pF @ 15V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

FET Type :

N-Channel

Current Rating :

80A

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSIP-T3

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 55A, 10V

Terminal Position :

Single

Mount :

Through Hole

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

385A

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

2V @ 60μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

290 mJ

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Published :

2003

Continuous Drain Current (ID) :

80A

Number of Elements :

1

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED