IPI045N10N3GXK

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

400A

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

137A Tc

Vgs (Max) :

±20V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3.5V @ 150μA

ECCN Code :

EAR99

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Packaging :

Tube

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

100V

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

100A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

214W Tc

DS Breakdown Voltage-Min :

100V

Series :

OptiMOS™ 3

Drain-source On Resistance-Max :

0.0045ohm

Gate Charge (Qg) (Max) @ Vgs :

117nC @ 10V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 100A, 10V

FET Type :

N-Channel

Number of Elements :

1

Mounting Type :

Through Hole

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Surface Mount :

No

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

8410pF @ 50V