IPI045N10N3 G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 100A, 10V

Terminal Finish :

Tin (Sn)

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

400A

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0045ohm

Vgs (Max) :

±20V

FET Type :

N-Channel

Pin Count :

3

Number of Terminations :

3

Transistor Application :

SWITCHING

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

8410pF @ 50V

Transistor Element Material :

SILICON

Power Dissipation-Max :

214W Tc

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

100A

Vgs(th) (Max) @ Id :

3.5V @ 150μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Qualification Status :

Not Qualified

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

137A Tc

Drain to Source Voltage (Vdss) :

100V

Number of Pins :

3

Series :

OptiMOS™ 3

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

DS Breakdown Voltage-Min :

100V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

117nC @ 10V