IPI041N12N3G
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- Mfr.Part #
- IPI041N12N3G
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- IPI041N12 - 12V-300V N-CHANNEL P
- Stock
- 19,736
- In Stock ：
- 19,736
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 270μA
- Number of Terminations :
- 3
- Rise Time :
- 52ns
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 211nC @ 10V
- Pbfree Code :
- No
- Terminal Finish :
- Tin (Sn)
- Published :
- 2008
- Turn-Off Delay Time :
- 70 ns
- Number of Pins :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Power Dissipation-Max :
- 300W Tc
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 480A
- Mount :
- Through Hole
- Reach Compliance Code :
- not_compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 13800pF @ 60V
- Turn On Delay Time :
- 35 ns
- Halogen Free :
- Halogen Free
- Drain-source On Resistance-Max :
- 0.0041Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Pin Count :
- 3
- Fall Time (Typ) :
- 21 ns
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 4.1m Ω @ 100A, 10V
- Factory Lead Time :
- 18 Weeks
- Lead Free :
- Contains Lead
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 120A
- Series :
- OptiMOS™
- Max Dual Supply Voltage :
- 120V
- Datasheets
- IPI041N12N3G
N-Channel Tube 4.1m Ω @ 100A, 10V ±20V 13800pF @ 60V 211nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI041N12N3GAKSA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 900 mJ.The maximum input capacitance of this device is 13800pF @ 60V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 120A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 70 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 480A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 35 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 120V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPI041N12N3GAKSA1 Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 120A
the turn-off delay time is 70 ns
based on its rated peak drain current 480A.
IPI041N12N3GAKSA1 Applications
There are a lot of Infineon Technologies
IPI041N12N3GAKSA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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